BA423AL Просмотр технического описания (PDF) - Philips Electronics
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BA423AL Datasheet PDF : 4 Pages
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Philips Semiconductors
AM band-switching diode
GRAPHICAL DATA
handbook1,0h0alfpage
IF
(mA)
50
MBG292
(1)
(2)
(3)
0
0
0.5
(1) Tj = 125 °C; typical values.
(2) Tj = 25 °C; typical values.
(3) Tj = 25 °C; maximum values.
1
V F (V) 1.5
Fig.2 Forward current as a function of
forward voltage.
handbook, h4alfpage
Cd
(pF)
3
2
1
0
0
4
MBG297
8
12 VR (V) 16
Product specification
BA423AL
handboo1k,0h4alfpage
IR
(nA)
10 3
10 2
10
MBG291
1
0
50
VR = 20 V.
Solid line: maximum values.
Dotted line: typical values.
100 Tj ( oC) 150
Fig.3 Reverse current as a function of
junction temperature.
handbook, h4alfpage
rD
(Ω)
3
2
1
0
0
4
MBG298
8
12 IF (mA) 16
f = 1 MHz; Tj = 25 °C.
Fig.4 Diode capacitance as a function of reverse
voltage; typical values.
f = 1 MHz; Tj = 25 °C.
Fig.5 Diode forward resistance as a function of
forward current; typical values.
1996 Mar 13
3
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