2N2102 Просмотр технического описания (PDF) - Continental Device India Limited

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2N2102

NPN SILICON PLANAR TRANSISTOR

Continental Device India Limited 

NPN SILICON PLANAR TRANSISTOR

2N2102

TO-39

Metal Can Package

ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)

DESCRIPTION

SYMBOL

TEST CONDITION

Collector Emitter Saturation Voltage *VCE (sat)

IC=150mA, IB=15mA

Base Emitter Saturation Voltage

*VBE (sat)

IC=150mA, IB=15mA

SMALL SIGNAL CHARACTERISTICS

Transition Frequency

Output Capacitance

Input Capacitance

Input Impedance

Voltage Feedback Ratio

Small Signal Current Gain

Output Impedance

Noise Figure

fT

IC=50mA, VCE=10V, f=20MHz

Cobo

VCB=10V, IE=0, f=1MHz

Cibo

VEB=0.5V, IC=0, f=1MHz

hib

IC=1mA, VCE=5V, f=1KHz

IC=5mA, VCE=10V, f=1KHz

hrb

IC=1mA, VCE=5V, f=1KHz

IC=5mA, VCE=10V, f=1KHz

hfe

IC=1mA, VCE=5V, f=1KHz

IC=5mA, VCE=10V, f=1KHz

hob

IC=1mA, VCE=5V, f=1KHz

IC=5mA, VCE=10V, f=1KHz

IC=300µA, VCE=10V,

NF

f=1KHz,Bandwidth=1.0 Hz

RS=1kΩ

MIN

60

24

4.0

30

35

0.01

0.01

TYP MAX UNIT

0.5

V

1.1

V

MHz

15

pF

80

pF

34

Ω

8.0

Ω

3.0

x10 -4

3.0

x10 -4

100

150

0.5 µmho

1.0 µmho

6.0

dB

2N2102Rev_1 040904E

Continental Device India Limited

Data Sheet

Page 2 of 4

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