DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

Q62702-G0080(1999) Просмотр технического описания (PDF) - Infineon Technologies

Номер в каталоге
Компоненты Описание
производитель
Q62702-G0080
(Rev.:1999)
Infineon
Infineon Technologies Infineon
Q62702-G0080 Datasheet PDF : 22 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
GaAs MMIC
CGY 196
_________________________________________________________________________________________________________
Pulse factor:
Ptot-max should not exceed the absolute maximum rating for the dissipated power PPulse = ” Pulse peak power ” = 2 W
c) Reliability Considerations
This procedure yields the upper limit for the power dissipation for continuous wave (cw) and pulse applications which
corresponds to the maximum allowed channel temperature. For best reliability keep the channel temperature low. The
following formula allows to track the individual contributions which determine the channel temperature.
Tch
=
Channel temperature
(= junction temperature)
( Pdiss / Pulse Factor x
Power dissipated in the chip,
divided by the applicable puls
factor ( = 1 for DC and CW ). It
does not contain decoupled RF-
power
RthChS ) +
Rth of device from channel to
soldering point
TS
Temperature of soldering
point, measured or
calculated
Electrical characteristics [3.0V DECT-Application f=1.89GHz ]
(TA = 25°C , f=1.89 GHz, ZS=ZL=50 Ohm, unless otherwise specified)
Infineon Aktiengesellschaft
4
01.3.1999
GS PD GaAs

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]