MMBT5401W(2017) Просмотр технического описания (PDF) - ON Semiconductor
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MMBT5401W Datasheet PDF : 6 Pages
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MMBT5401W
1000
700 IC/IB = 10
500 TJ = 25°C
300
200
tr @ VCC = 120 V
tr @ VCC = 30 V
100
70
50
30
20
10
0.2 0.3 0.5
td @ VBE(off) = 1.0 V
VCC = 120 V
1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (mA)
100 200
Figure 10. Turn−On Time
1000
VCE = 1 V
TA = 25°C
100
2000
1000 IC/IB = 10
700 TJ = 25°C
500
300
tf @ VCC = 30 V
tf @ VCC = 120 V
200
ts @ VCC = 120 V
100
70
50
30
20
0.2 0.3 0.5
1.0 2.0 3.0 5.0 10 20 30 50
IC, COLLECTOR CURRENT (mA)
100 200
Figure 11. Turn−Off Time
1
10 mSec
0.1
1 Sec
0.01
10
0.1
1
10
100
IC, COLLECTOR CURRENT (A)
Figure 12. Current Gain Bandwidth Product
0.001
1
10
100
1000
VCE, COLLECTOR EMITTER VOLTAGE (V)
Figure 13. Safe Operating Area
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5
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