MMBT5401WT1G(2017) Просмотр технического описания (PDF) - ON Semiconductor
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Компоненты Описание
производитель
MMBT5401WT1G Datasheet PDF : 6 Pages
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MMBT5401W
0.20
0.18
0.15
IC/IB = 10
1.0
IC/IB = 10
0.9
0.8
−55°C
25°C
0.13 150°C
0.10
25°C
0.08
0.05 −55°C
0.7
0.6
150°C
0.5
0.4
0.03
0
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 4. Collector Emitter Saturation Voltage
vs. Collector Current
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 5. Base Emitter Saturation Voltage vs.
Collector Current
1.1
1.0 VCE = 10 V
0.9
0.8
−55°C
0.7
25°C
0.6
0.5
150°C
0.4
0.3
0.2
0.0001
0.001
0.01
0.1
IC, COLLECTOR CURRENT (A)
Figure 6. Base Emitter Voltage vs. Collector
Current
2.5
2.0
TJ = - 55°C to 135°C
1.5
1.0
0.5
qVC for VCE(sat)
0
-0.5
-1.0
-1.5
-2.0
qVB for VBE(sat)
-2.5
0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100
IC, COLLECTOR CURRENT (mA)
Figure 7. Temperature Coefficients
100
70
VBB
VCC
50
10.2 V
+ 8.8 V
-30 V
30
Vin
100
3.0 k RC
20
10 ms
INPUT PULSE
0.25 mF RB
5.1 k
Vout
10
7.0
5.0
tr, tf ≤ 10 ns
Vin
100
1N914
3.0
DUTY CYCLE = 1.0%
2.0
TJ = 25°C
Cibo
Cobo
Values Shown are for IC @ 10 mA
Figure 8. Switching Time Test Circuit
1.0
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
20
VR, REVERSE VOLTAGE (VOLTS)
Figure 9. Capacitances
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