MMBT5401WT1G(2017) Просмотр технического описания (PDF) - ON Semiconductor

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Компоненты Описание

производитель

MMBT5401WT1G
(Rev.:2017)

High Voltage Transistor PNP Silicon

ON Semiconductor 

MMBT5401W

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector −Emitter Breakdown Voltage

(IC = −1.0 mAdc, IB = 0)

Collector −Base Breakdown Voltage

(IC = −100 mAdc, IE = 0)

Emitter −Base Breakdown Voltage

(IE = −10 mAdc, IC = 0)

Collector−Base Cutoff Current

(VCB = −120 Vdc, IE = 0)

(VCB = −120 Vdc, IE = 0, TA = 100°C)

V(BR)CEO

Vdc

−150

−

V(BR)CBO

Vdc

−160

−

V(BR)EBO

Vdc

−5.0

−

ICBO

−

−50

nAdc

−

−50

mAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −1.0 mAdc, VCE = −5.0 Vdc)

(IC = −10 mAdc, VCE = −5.0 Vdc)

(IC = −50 mAdc, VCE = −5.0 Vdc)

Collector −Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc)

(IC = −50 mAdc, IB = −5.0 mAdc)

Base −Emitter Saturation Voltage

(IC = −10 mAdc, IB = −1.0 mAdc)

(IC = −50 mAdc, IB = −5.0 mAdc)

hFE

50

60

50

VCE(sat)

−

−

VBE(sat)

−

−

−

−

240

−

Vdc

−0.2

−0.5

Vdc

−1.0

−1.0

SMALL− SIGNAL CHARACTERISTICS

Current −Gain — Bandwidth Product

(IC = −10 mAdc, VCE = −10 Vdc, f = 100 MHz)

fT

MHz

100

300

Output Capacitance

(VCB = −10 Vdc, IE = 0, f = 1.0 MHz)

Cobo

−

pF

6.0

Small Signal Current Gain

(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1.0 kHz)

hfe

−

40

200

Noise Figure

(IC = −200 mAdc, VCE = −5.0 Vdc, RS = 10 W, f = 1.0 kHz)

NF

dB

−

8.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

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