BA592 Просмотр технического описания (PDF) - Philips Electronics
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BA592 Datasheet PDF : 8 Pages
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Philips Semiconductors
Band-switching diode
Preliminary specification
BA592
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
IR
reverse current
Cd
diode capacitance
rD
diode forward resistance
1/gp
reverse resistance
LS
series inductance
CONDITIONS
IF = 10 mA
VR = 20 V
VR = 1 V; f = 1 MHz; note 1
VR = 3 V; f = 1 MHz; note 1
IF = 3 mA; f = 100 MHz; note 1
IF = 10 mA; f = 100 MHz; note 1
VR = 1 V; f = 100 MHz; note 1
Note
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
MIN.
−
−
−
0.6
−
−
−
−
TYP.
−
−
0.92
0.85
0.45
0.36
100
2
MAX.
1
20
1.4
1.1
0.7
0.5
−
−
UNIT
V
nA
pF
pF
Ω
Ω
kΩ
nH
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-s
thermal resistance from junction to soldering point
GRAPHICAL DATA
CONDITIONS
VALUE
120
UNIT
K/W
10
rD
(Ω)
1
0.1
0.1
1
10
100
IF (mA)
f = 100 MHz; Tj = 25 °C.
Fig.2 Forward resistance as a function of
forward current; typical values.
2
Cd
(pF)
1.6
1.2
0.8
0.4
0
0
10
20
30
VR (V)
f = 1 MHz; Tj = 25 °C.
Fig.3 Diode capacitance as a function of reverse
voltage; typical values.
1998 May 07
3
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