BZT03C82-TR Просмотр технического описания (PDF) - New Jersey Semiconductor
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BZT03C82-TR Datasheet PDF : 3 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
BZTOS-SerJes
Zener Diodes with Surge Current Specification
Features
• Glass passivated junction
• Hermetically sealed package
• Clamping time in picoseconds
Applications
Medium power voltage regulators and medium power
transient suppression circuits
Mechanical Data
Case: SOD-57 Sintered glass case
Weight: approx. 369 mg
Packaging Codes/Options:
TAP / 5 k Ammopack (52 mm tape) / 25 k/box
T R / 5 k 10" reel
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Symbol
Value
Unit
Power dissipation
I = 10 mm, TL = 25°C
PV
3.25
W
Tamb = 25 °C
PV
1.3
W
Repetitive peak reverse power
dissipation
PZRM
10
W
Non repetitive peak surge power tp = 100|is, Tj = 25°C
dissipation
Junction temperature
Storage temperature range
PZSM
600
W
Ti
175
°c
Tstg
-65to+ 175
°c
Thermal Characteristics
Tamb = 25 °C, unless otherwise specified
Parameter
Test condition
Junction ambient 1 = 10 mm, TL = constant
on PC board with spacing 25 mm
Symbol
^thJA
RmjA
Value
46
100
Unit
• K/W
K/W
Electrical Characteristics
Tamb =25 °C, unless otherwise specified
Parameter
Test condition
Forward voltage
IF = 0.5 A
Symbol
Min
Typ.
Max
Unit
VF
1.2
V
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Infermation furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However,NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use.
NJ Semi-Conductors encouragescustomers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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