BLW80 Просмотр технического описания (PDF) - New Jersey Semiconductor
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BLW80 Datasheet PDF : 4 Pages
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RATINGS
Limiting values in accordance with the Absolute Maximum System (IEC 134)
Collector-emitter voltage (VBE = 0)
peak value
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current (d.c.)
VCESM
VCEO
VEBO
Ic
Collector current (peak value); f > 1 MHz
ICM
Total power dissipation (d.c. and r.f.) up to Tmb = 25 °C
Ptot
Storage temperature
Tstg
Operating junction temperature
TJ
max
36 V
max
17 V
max
max
4V
1A
max
3A
max
17 W
-65 to +150
"C
max
200 'C
10
(A)
Tmb - 25 "C
:Th = 70 °
10 '
10
VCE(V)
Fig.2 D.C. soar.
THERMAL RESISTANCE
From junction to mounting base
From mounting base to heatsink
MGPS3S
\
|__ r.f. power dissipation I
1
Mrf
.'
VCE<165V
f>1MHz
(W)
short time operation"""""- -»^_
during mism,atch | d.era.te ,b^y^~-^»^- •»,.
'^"—• k ^ l 0.092 W/K ^"--—.
' ^T^^-i
continuous operation ^^~1-^^^
!!
^^~--
c
50
Th(oc)
100
Fig.3 R.F. power dissipation.
Rthj-mb
Rth mb-h
10,3 K/VV
0,6 K/W
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