BU932 Просмотр технического описания (PDF) - Inchange Semiconductor

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BU932

Silicon NPN Power Transistor

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistor

isc Product Specification

BU932

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.1A; IB= 0;L= 10mH

450

V

VCE(sat) Collector-Emitter Saturation Voltage IC= 8A; IB= 150mA

V BE(sat) Base-Emitter Saturation Voltage

ICES

Collector Cutoff Current

ICEO

Collector Cutoff Current

IC= 8A; IB= 150mA

VCE= 450V;VBE= 0

VCE= 450V;VBE= 0;Tj= 125℃

VCE= 450V;IB= 0

1.8

V

2.2

V

1.0

mA

5.0

1.0 mA

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

50 mA

hFE

DC Current Gain

IC= 5A ; VCE= 10V

300

VECF C-E Diode Forward Voltage

IF= 10A

2.8

V

isc website：www.iscsemi.cn

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