2N5320(2012) Просмотр технического описания (PDF) - Comset Semiconductors
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2N5320 Datasheet PDF : 3 Pages
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NPN 2N5320 – 2N5321
SILICON PLANAR EPITAXIAL TRANSISTORS
The 2N5320 and 2N5321 are NPN transistors mounted in TO-39 metal case .
They are especially intended for high-voltage medium power applications in industrial and
commercial equipements.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VCEV
VEBO
IC
IB
PD
TJ
TStg
Collector-Emitter Voltage (IB = 0)
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (VBE = 1.5V)
Emitter-Base Voltage (IC = 0)
Collector Current
Base Current
Total Power Dissipation
Junction Temperature
@ Tamb = 25°
@ Tcase= 25°
Storage Temperature range
Value
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
2N5320
2N5321
75
50
100
75
100
75
6
5
2
1
1
10
-65 to +200
-65 to +200
Unit
V
V
V
V
A
A
Watts
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
RthJ-c
Thermal Resistance, Junction to ambient
Thermal Resistance, Junction to case
Value
175
17.5
Unit
°C/W
°C/W
COMSET SEMICONDUCTORS
1/3
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