2SC2834 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC2834 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
i, Una.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC2834
DESCRIPTION
• High Breakdown Voltage-
: V(BR)CBO= SOOV(Min)
• High Switching Speed
• Low Collector Saturation Voltage
APPLICATIONS
• Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
800
V
VOEO
Collector-Emitter Voltage
500
V
VEBO
Emitter-Base Voltage
8
V
Ic
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
15
A
IB
Base Current-Continuous
Collector Power Dissipation
PC
@ TC=25"C
Tj
Junction Temperature
4
A
100
W
150
"C
Tstg
Storage Temperature Range
-55-150
"C
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mm
MM MIN MAX
A 19.60 20.10
B 15.50 15.70
r 4.70 4.90
D 0.90 1.10
E 1.90 2.10
F 3.40 3.60
G 2.90 3.20
H 3.20 3.40
J 0,595 0,605
K 20.00 20.70
L 1.90 2.20
N 10.89 10.91
Q 4.90 5.10
R 3.35 3.45
S 1.995 2.100
U 5.90 6.10
Y 9.90 10.10
N,l Senii-Conduetors reserves the right to change tost conditions, parameter limits and package dimensions without
notice. Inr'ormation furnished by NJ Senii-Comluotors is helie\ed to he both accur.ito and reliable at the time of aoi
to press. I loue\er. N.I Seiiii-Coiuliietors assumes no responsibilit) lor an> errors or omissions discovered in ils u.se
N.I Scnii-C'oiulnciors eiicniira»es eiislomers to verify thai datasheets are cunvnl before plnciny orders.
Quality Semi-Conductors
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