2N2218A Просмотр технического описания (PDF) - Boca Semiconductor
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2N2218A Datasheet PDF : 3 Pages
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ELECTRICAL CHARACTERISTICS (Ta=25 deg C Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST CONDITION
DC Current Gain
hFE
IC=0.1mA,VCE=10V
IC=1mA,VCE=10V
IC=10mA,VCE=10V
2N2218A to 2N2219A
2218A 2219A
>20
>35
>25
>50
>35
>75
DYNAMIC CHARACTERISTICS
Small Signal Current Gain
hfe
Input Impedance
hie
Voltage Feedback Ratio
hre
Out put Admittance
hoe
Collector Base Time Constant
rb'Cc
Real Part Common-Emitter High Frequency
Input Impedance
Noise Figure
Re(hie)
NF
Ta=55 deg C
IC=10mA,VCE=10V
IC=150mA,VCE=10V
IC=150mA,VCE=1V
IC=500mA,VCE=10V
>15
40-120
>20
>25
>35
100-300
>50
>40
ALL f=1kHz
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IC=1mA, VCE=10V
IC=10mA, VCE=10V
IE=20mA, VCB=20V
f=31.8MHz
IC=20mA, VCE=20V
f=300MHz
IC=100uA, VCE=10V
Rs=1kohms, f=1kHz
30-150
50-300
1.0-3.5
0.2-1.0
<5.0
<2.5
3.0-15
10-100
<150
50-300
75-375
2.0-8.0
0.25-1.25
<8.0
<4.0
5.0-35
25-200
<150
<60
<60
-
<4.0
DYNAMIC CHARACTERISTICS
Transistors Frequency
Out-Put Capacitance
Input Capacitance
ft
IC=20mA, VCE=20V >250 >300
f=100MHz
Cob
VCB=10V, IE=0
<8.0 <8.0
f=100kHz
Cib
VEB=0.5V, IC=0
<25
<25
f=100kHz
SWITCHING Time
Delay time
Rise time
td
IC=150mA,IB1=15mA
<10
tr
VCC=30V,VBE=0.5V
-
<25
Storage time
Fall time
ts
IC=150mA, IB1=
<225
tf
IB2=15mA, VCC=30V -
<60
*Pulse Condition: Pulse Width=300us, Duty Cycle=2%
UNIT
kohms
x10-4
umhos
ps
ohms
dB
MHz
pF
pF
ns
ns
ns
ns
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