2N5935 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2N5935

Silicon NPN Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon NPN Power Transistors

isc Product Specification

2N5935

ELECTRICAL CHARACTERISTICS

TC=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 50mA ; IB= 0

VCE(sat) Collector-Emitter Saturation Voltage IC= 20A; IB= 1.3A

VBE(on) Base-Emitter On Voltage

IC= 30A ; VCE= 4V

ICEO

Collector Cutoff Current

VCE= 80V; IB= 0

ICBO

Collector Cutoff Current

VCB= 90V; IE= 0

IEBO

Emitter Cutoff Current

VEB= 5V; IC= 0

hFE

DC Current Gain

IC= 30A ; VCE= 4V

fT

Current-Gain—Bandwidth Product IC= 1A ; VCE= 10V ;ftest= 1MHz

MIN TYP. MAX UNIT

80

V

2.0

V

3.5

V

2.0 mA

1.0 mA

1.0 mA

20

100

30

MHz

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