2SC2841 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC2841 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Vceo(sus) Collector-Emitter Sustaining Voltage lc= 30mA; le= 0
VcE(sat) Collector-Emitter Saturation Voltage
lc= 3A; IB= 0.6A
VeE(sat) Base-Emitter Saturation Voltage
lc= 3A; IB= 0.6A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hpE-1
DC Current Gain
lc=0.1A;VCE=5V
hpE2
DC Current Gain
lc= 3A; VCE= 5V
fr
Current-Gain—Bandwidth Product
lc=0.5A;VcE=10V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc= 3A, IB1= -IKF 0.6A
2SC2841
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
0.1
mA
0.1
mA
15
8
11
MHz
1.0
Ms
3.0
us
t
1.0
Ms
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