2SC2841 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC2841 Datasheet PDF : 2 Pages
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20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One..
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC2841
DESCRIPTION
• High Breakdown Voltage-
: V(BR)CBo= SOOV(Min)
• High Switching Speed
• Low Collector Saturation Voltage
APPLICATIONS
• Designed for high speed power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO Collector-Emitter Voltage
400
V
VEBO Emitter-Base Voltage
7
V
Ic
Collector Current-Continuous
7
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ TC=25'C
Tj ' Junction Temperature
15
A
70
W
150
"C
Tstg
Storage Temperature Range
-55-150
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PIN 1.BASE
I. COLLECTOR
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mm
DIM WIN MAX
A 19.60 20.10
B 15.50 15.70
C 4.70 4.90
D 0.90 1.10
E 1.90 2.10
F 3.40 3.60
G 2.90 3.20
H 3.20 3.40
J 0.595 0.605
K 20.00 20.70
L 1.90 2.20
H 10.89 10.91
Q 4.90 5.10
R 3.35 3.45
S 1.995 2.100
U 5,90 $,1Q
y 9.90 10,10
N.I Semi-conductors reserves the right to change test conditions, parameter limits and puckiige dimensions \\ithmit
m.iice. Information furnished by N.I Semi-Conductors is believed to he hoth accurate mid reliuhle at the time ofiioii
(» press. I low ever, M Semi-Conductors assumes no responsibility lor anv errors or omissions discovered in its use.
N.I Seini-C'ondiiclors enc<uira.i:es customers to \cnly that datasheet-; are ciirivnt before placing orders.
Qualihy 5emi-Con<Jucfors
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