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производитель

1N6508

Isolated Diode Array

Sensitron 

SENSITRON

SEMICONDUCTOR

1N6508

TECHNICAL DATA

DATA SHEET 4294, REV. -

Isolated Diode Array

Applications:

• High Frequency Data Lines

• RS-323 & RS-432 Networks

• LAN, Ethernet, I/O Ports

• IEC61000-4 compatible for ESD / EFT / Surge

Features:

• Protects up to 8 I/O Ports

• Isolated diodes eliminate crosstalk

• High Density Packaging

• High Breakdown Voltage; High Speed Switching (< 10 nsec)

• Low Capacitance; Low Leakage

• Hermetic Ceramic package

• TX, TXV, S level screening available

Maximum Ratings:

All ratings are at 25 oC unless otherwise noted

Characteristics

Symbol

Condition

Reverse Breakdown Voltage

VBR

Per diode, Pulsed: PW = 100ms

max.; duty cycle < 20%

Continuous Forward Current

IO

Per diode, Derate at 2.4mA/°C

above +25 °C

Peak Surge Current

IFSM

Per diode, tp= 1/120 s

Power Dissipation

PD

Per Junction, Derate at

4.0mW/°C above +25 °C

Power Dissipation

PD

Per Package, Derate at

4.8 mW/oC above 25 oC

Max. Operating Temperature

TJ

-

Max. Storage Temperature

Tstg

-

Electrical Characteristics:

All ratings are per diode and at 25 oC unless otherwise noted

Characteristics

Symbol

Condition

Pulsed: PW =

VF1

300us +/-

50us, duty

If = 100mAdc

Max. Forward Voltage Drop

cycle < 2%,

VF2

90us after

If = 500mAdc

leading edge

Max. Reverse Current

Max. Capacitance

(Pin to Pin)

IR1

@VR = 40V

CT

@VR = 0V, F=1MHz

Max. Forward Recovery

Time

TFR

IF = 500mA

Max. Reverse Recovery

Time

TRR

If = IR = 200mAdc, irr =

20mAdc, RL = 100 ohms

Max.

60

300

500

400

600

-65 to +150

-65 to +200

Max.

1.00

1.50

0.1

8.0

40

20

Units

Vdc

mA

mA

mW

mW

°C

°C

Units

V

V

µA

pF

ns

ns

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• World Wide Web Site - http://www.sensitron.com • E-Mail Address - sales@sensitron.com •

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