MRF1004MA Просмотр технического описания (PDF) - Motorola => Freescale
Номер в каталоге
Компоненты Описание
производитель
MRF1004MA Datasheet PDF : 6 Pages
| |||
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MRF1004MA/D
The RF Line
Microwave Pulse
Power Transistors
MRF1004MA
Designed for Class B and C common base amplifier applications in short and
long pulse TACAN, IFF, DME, and radar transmitters.
• Guaranteed Performance @ 1090 MHz, 35 Vdc
Output Power = 4.0 Watts Peak
Minimum Gain = 10 dB
• 100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
• Industry Standard Package
• Nitride Passivated
• Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
• Internal Input Matching for Broadband Operation
• Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
4.0 W, 960 – 1215 MHz
MICROWAVE POWER
TRANSISTORS
NPN SILICON
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
20
Vdc
Collector–Base Voltage
VCBO
50
Vdc
Emitter–Base Voltage
VEBO
3.5
Vdc
Collector Current — Continuous
IC
250
mAdc
Total Device Dissipation @ TC = 25°C (1)
PD
Derate above 25°C
7.0
Watts
40
mW/°C
CASE 332–04, STYLE 1
Storage Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Tstg
– 65 to +150
°C
Symbol
Max
Unit
Thermal Resistance, Junction to Case (2)
RθJC
25
°C/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, IB = 0)
Collector–Emitter Breakdown Voltage
(IC = 5.0 mAdc, VBE = 0)
Collector–Base Breakdown Voltage
(IC = 5.0 mAdc, IE = 0)
Emitter–Base Breakdown Voltage
(IE = 1.0 mAdc, IC = 0)
Collector Cutoff Current
(VCB = 35 Vdc, IE = 0)
V(BR)CEO
20
—
—
Vdc
V(BR)CES
50
—
—
Vdc
V(BR)CBO
50
—
—
Vdc
V(BR)EBO
3.5
—
—
Vdc
ICBO
—
—
0.5
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 75 mAdc, VCE = 5.0 Vdc)
hFE
10
—
100
—
NOTES:
(continued)
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MRF1004MA
1
Share Link: 