2SC2626 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC2626 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwisespecified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= 10mA; IB= 0
VoEO(SUS) Collector-Emitter Sustaining Voltage lc= 50mA ; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
lc= 1mA; IE=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; lc= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 6A; IB= 1 .2A
VBE(sat) Base-Emitter Saturation Voltage
lc= 6A; IB= 1 .2A
ICBO
Collector Cutoff Current
VCB= 400V ; IE=0
IEBO
Emitter Cutoff Current
VEB= 7V; lc=0
hpE
DC Current Gain
lc= 6A; VCE= 5V
Switching times
ton
Turn-on Time
tstg
Storage Time
tf
Fall Time
lc=10A, !Bi=-lB2=2A
RL= 200 ;Pw=20u S
Duty Cycles: 2%
2SC2626
MIN TYP. MAX UNIT
300
V
300
V
400
V
7
V
1.2
V
1.5
V
1.0 mA
0.1 mA
10
0.8 M s
2.0
Ms
0.8 M s
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