Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage 'lc=50mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage lc=1mA; IE=0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0.1mA; lc= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= 7A; IB= 1 .4A
VsE(sat) Base-Emitter Saturation Voltage
lc= 7A; IB= 1 .4A
ICBO
Collector Cutoff Current
VCB= 450V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 7V; lc= 0
HFE
DC Current Gain
lc= 3A; VCE= 4V
2SC2437
MIN TYP. MAX UNIT
400
V
450
V
7
V
1.5
V
1.2
V
1.0 mA
0.1 mA
10