A1879 Просмотр технического описания (PDF) - New Jersey Semiconductor

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производитель

A1879

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

ELECTRICAL CHARACTERISTICS

Tc=25°C unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VcEO(SUS) Collector-Emitter Sustaining Voltage lc=-0.1A;lB=0

VcE(sat)

Collector-Emitter Saturation Voltage lc= -3.5A; IB= -0.35A

VeE(sat) Base-Emitter Saturation Voltage

lc= -3.5A; IB= -0.35A

ICBO

Collector Cutoff Current

VCB= -80V; IE= 0

I CEO Collector Cutoff Current

VCE= -80V; IB= 0

IEBO

Emitter Cutoff Current

VEB= -7V; lc= 0

hFE

DC Current Gain

lc= -3.5A; VCE= -2V

fy

Current-Gain—Bandwidth Product |C=-0.7A;VCE=-10V

Switching Times

ton

Turn-on Time

tstg

Storage Time

tf

Fall Time

lc= -3.5A, IB1= -IB2= -0.35A,

RL= 8 Q , VBKT -4V;

2SA1879

MIN TYP. MAX UNIT

-80

V

-0.3

V

-1.2

V

-100 u A

-100 U A

-100 n A

70

50

MHz

0.3

us

1.5

VS

0.2

MS

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