BFR92 Просмотр технического описания (PDF) - Philips Electronics
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BFR92 Datasheet PDF : 10 Pages
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Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR92
handbook, h6alfpage
fT
(GHz)
4
MEA444
2
0
0
10
20 IC (mA) 30
VCE = 10 V; f = 500 MHz; Tj = 25 °C.
Fig.6 Transition frequency as a function of
collector current.
handbook,3h0alfpage
gain
(dB)
20
MEA427
G UM
10
I S12 I 2
0
102
10 3
f (MHz)
104
IC = 14 mA; VCE = 10 V; Tamb = 25 °C.
Fig.7 Gain as a function of frequency.
handbooFk, h6alfpage
(dB)
5
4
3
2
1
0
10 –1
MEA465
1
f (GHz)
10
IC = 2 mA; VCE = 10 V; Tamb = 25 °C; Zs = opt.
Fig.8 Minimum noise figure as a function of
frequency.
September 1995
handbook, h5alfpage
F
(dB)
4
MEA424
3
2
1
0
0
5
10
15
20
I C (mA)
VCE = 10 V; f = 500 MHz; Tamb = 25 °C; Zs = opt.
Fig.9 Minimum noise figure as a function of
collector current.
5
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