BFR92 Просмотр технического описания (PDF) - Philips Electronics
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BFR92 Datasheet PDF : 10 Pages
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Philips Semiconductors
NPN 5 GHz wideband transistor
Product specification
BFR92
DESCRIPTION
NPN transistor in a plastic SOT23
envelope primarily intended for use in
RF wideband amplifiers and
oscillators. The transistor features
low intermodulation distortion and
high power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
PNP complement is BFT92.
PINNING
PIN
DESCRIPTION
Code: P1p
1 base
2 emitter
3 collector
fpage
3
1
Top view
2
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
IC
Ptot
fT
PARAMETER
collector-base voltage
collector-emitter voltage
DC collector current
total power dissipation
transition frequency
Cre
feedback capacitance
GUM
maximum unilateral power gain
F
noise figure
Vo
output voltage
CONDITIONS
open emitter
open base
up to Ts = 95 °C; note 1
IC = 14 mA; VCE = 10 V; f = 500 MHz;
Tj = 25 °C
IC = 2 mA; VCE = 10 V; f = 1 MHz
IC = 14 mA; VCE = 10 V; f = 500 MHz;
Tamb = 25 °C
IC = 2 mA; VCE = 10 V; f = 500 MHz;
Tamb = 25 °C; Zs = opt.
dim = −60 dB; IC = 14 mA; VCE = 10 V;
RL = 75 Ω; Tamb = 25 °C;
f(p+q−r) = 493.25 MHz
TYP.
−
−
−
−
5
0.4
18
2.4
150
MAX. UNIT
20
V
15
V
25
mA
300 mW
−
GHz
−
pF
−
dB
−
dB
−
mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
VCEO
VEBO
IC
Ptot
Tstg
Tj
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
open base
open collector
up to Ts = 95 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector tab.
MIN. MAX. UNIT
−
20
V
−
15
V
−
2
V
−
25
mA
−
300 mW
−65 150 °C
−
175 °C
September 1995
2
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