2SC2873 Просмотр технического описания (PDF) - GUANGDONG HOTTECH INDUSTRIAL CO.,LTD.

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Компоненты Описание

производитель

2SC2873

Plastic-Encapsulate Transistors

GUANGDONG HOTTECH INDUSTRIAL CO.,LTD. 

Plastic-Encapsulate Transistors

FEATURES

• Small flat package.

• Low saturation voltage VCE(sat)=-0.5V

• High speed switching time

• PC=1.0 to 2.0W

• Complementary to 2SA1213

Maximum Ratings (Ta=25 unless otherwise noted)

Parameter

Symbol

Value

Collector-Base Voltage

VCBO

50

Collector-Emitter Voltage

VCEO

50

Emitter-Base Voltage

VEBO

5

Collector Current -Continuous

IC

2

Collector Power dissipation

0.5

PC

1 (1)

Junction Temperature

TJ

150

Storage Temperature

Tstg

-55to +150

Note (1):Mounted on a ceramic substrate(250mm2*0.8t)

Unit

V

V

V

A

W

2SC2873 (NPN)

1. BASE

2. COLLECTO

3. EMITTER

SOT-89

ELECTRICAL CHARACTERISTICS ( @ Ta=25 unless otherwise specified)

Parameter

Symbol

Test conditions

Min Typ Max Unit

Collector-emitter breakdown voltage

VCEO

IC=10mA, IB=0

50

Collector cut-off current

ICBO

VCB=50V,IE=0

Emitter cut-off current

IEBO

VEB=5V,IC=0

DC current gain

hFE

VCE=2V,IC=500mA

70

Collector-emitter saturation voltage

VCE(sat) IC=1A, IB=50mA

Base-emitter saturation voltage

VBE(sat) IC=1A, IB=50mA

V

0.1

μA

0.1

μA

240

0.5

V

1.2

mV

Transition frequency

fT

VCE=2V,Ic=0.5A

120

MHz

Collector output capacitance

Cob

VCB=10V,IE=0,f=1MHz

30

pF

CLASSIFICATION OF hFE

Rank

Range

Marking

O

70-140

MO

Y

120-240

MY

GUANGDONG HOTTECH INDUSTRIAL CO,. LTD.

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