2SC3210 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC3210 Datasheet PDF : 2 Pages
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Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= 0.2A; L= 25mH
VcE(sat) Collector-Emitter Saturation Voltage lc= 5A; IB= 1A
VeE(sat) Base-Emitter Saturation Voltage
lc= 5A; IB= 1A
ICBO
Collector Cutoff Current
VCB= 500V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; lc= 0
hpE-1
DC Current Gain
lc= 0.1 A: VCE= 5V
hFE-2
DC Current Gain
lc= 5A; VCE= 5V
fi
Current-Gain—Bandwidth Product lc=0.5A; VCE= 10V
Switching Times; Resistive Load
ton
Turn-on Time
ts
Storage Time
tf
Fall Time
lc=5A;lBi=-lB2=1A;
Vcc= 1 00V
2SC3210
MIN TYP. MAX UNIT
400
V
1.0
V
1.5
V
0.1 mA
0.1 mA
15
8
11
MHz
1.0
[i S
2.5 u s
1.0 u s
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