2SC3210 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SC3210 Datasheet PDF : 2 Pages
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^zml-ConaLictoi LPt
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistor
TELEPHONE: (973) 376-2922
(212) 227-6005
FAX: (973) 376-8960
2SC3210
DESCRIPTION
• Collector-Emiiter Sustaining Voltage^
: VcEo<susr 400V(Min.)
• Low Collector Saturation Voltage
:VCE(sat)=1.0V(Max.)@lc-5A
• High Speed Switching
• : ^»'**v
123
i1 -
3
PIN 1. BASE
2. COLLECT OR
3-ailTTER
TC-3PFs package
APPLICATIONS
• Designed for high speed switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
500
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter- Base Voltage
7
V
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* C*t-
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V Si --•
t"
A
t
i
US'. ** — ^'r— ) ff:
1
A
K
-•--•-D
* -m
>
T
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*- -^J
-R
Ic
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current-Continuous
Collector Power Dissipation
@Ta=25"C
PC
Collector Power Dissipation
@TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
10
A
20
A
5
A
3
W
100
150
'C
-55-150 -c
mm
DIM WIN MAX
A 20,70 21.30
B 14.70 15.30
C
4.80 5.20
D 0.90 1,10
F
3.20 3.40
H
3.70 4.30
J
0.50 0.70
K 16.40 17,00
L
1.90 2,10
N 10,30 11.00
0
5.60 6.00
R
1.30 2.20
S
3.10 3.50
T
8,70 9.30
U 0.55 0.7S
N.I Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
noiice. Information furnished by N.I Semi-Conduotors is believed to he both accurate and reliable ill the time of going
10 press, lloue\er. N.I Semi-Conductors assumes no responsibility for an\s or omissions discovered in ils use.
N.I Semi-C'onductiirs eiiuuira»es customers to verify that datasheets aix- ciinvnl before placing orders.
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