2SC5081 Просмотр технического описания (PDF) - Hitachi -> Renesas Electronics
Номер в каталоге
Компоненты Описание
производитель
2SC5081 Datasheet PDF : 5 Pages
| |||
2SC5081
Absolute Maximum Ratings (Ta = 25°C)
Item
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
Tj
Tstg
Ratings
Unit
15
V
8
V
1.5
V
50
mA
100
mW
150
°C
–55 to +150
°C
Electrical Characteristics (Ta = 25°C)
Item
Collector to base breakdown
voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector output capacitance
Gain bandwidth product
Power gain
Symbol Min
V(BR)CBO
15
I CBO
I CEO
I EBO
hFE
Cob
fT
PG
—
—
—
50
—
10.5
15
Noise figure
NF
—
Note: Marking is “ZD–”.
Typ
—
—
—
—
90
0.4
13.5
18
1.1
Max
—
1
1
10
160
0.75
—
—
2.0
Unit
V
µA
mA
µA
pF
GHz
dB
dB
Test conditions
IC = 10 µA, IE = 0
VCB = 12 V, IE = 0
VCE = 8 V, RBE = ∞
VEB = 1.5 V, IC = 0
VCE = 5 V, IC = 20 mA
VCB = 5 V, IE = 0, f = 1 MHz
VCE = 5 V, IC = 20 mA
VCE = 5 V, IC = 20 mA,
f = 900 MHz
VCE = 5 V, IC = 5 mA,
f = 900 MHz
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
See characteristic curves of 2SC5080.
2
Share Link: 