2SB1119 Просмотр технического описания (PDF) - Galaxy Semi-Conductor
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2SB1119 Datasheet PDF : 4 Pages
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PNP Epitaxial Planar Silicon Transistors
FEATURES
Very small size making it easy to provide
High-density,small-size hybrid IC’s.
Pb
Lead-free
Production specification
2SB1119
ORDERING INFORMATION
Type No.
Marking
2SB1119
BB
SOT-89
Package Code
SOT-89
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
-25
V
VCEO
Collector-Emitter Voltage
-25
V
VEBO
IC
PC
Emitter-Base Voltage
Collector Current –DC
-Pulse
Collector Dissipation
-5
V
-1
-2
mA
500
mW
Tj,Tstg
Junction and Storage Temperature
-55 to+150
℃
E043
Rev.A
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