2SB1119 Просмотр технического описания (PDF) - TY Semiconductor
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производитель
2SB1119 Datasheet PDF : 1 Pages
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Features
Very small size making it easy to provide highdensity,
small-sized hybrid IC’s.
Product specification
2SB1119
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector current (pulse)
Collector dissipation
Jumction temperature
Storage temperature
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current Gain
Gain bandwidth product
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Output capacitance
Symbol
Rating
Unit
VCBO
-25
V
VCEO
-25
V
VEBO
-5
V
IC
-1
A
ICP
-2
A
PC
500
mW
Tj
150
Tstg
-55 to +150
Symbol
Testconditons
ICBO VCB = -20V , IE = 0
IEBO VCB = -4V , IE = 0
VCE = -2V , IC = -50mA
hFE
VCE = -2V , IC = -1A
fT VCE = -10V , IC = -50mA
VCE(sat) IC = -500mA , IB = -50mA
VBE(sat) IC = -500mA , IB = -50mA
V(BR)CBO IC = -10ìA , IE = 0
V(BR)CEO IC = -1mA , RBE =
V(BR)EBO IE = -10ìA , IC = 0
Cob VCB = -10V , f = 1MHz
hFE Classification
Marking
Rank
hFE
R
100 200
BB
S
T
140 280
200 400
U
280 560
Min Typ Max Unit
-0.1 ìA
-0.1 ìA
100
560
40
180
MHz
-0.15 -0.7 V
-0.85 -1.2 V
-25
V
-25
V
-5
V
52
pF
http://www.twtysemi.com
sales@twtysemi.com
4008-318-123
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