2SB1073 Просмотр технического описания (PDF) - Jiangsu Changjiang Electronics Technology Co., Ltd

Номер в каталоге

Компоненты Описание

производитель

2SB1073

SOT-89-3L Plastic-Encapsulate Transistors

Jiangsu Changjiang Electronics Technology Co., Ltd 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD

SOT-89-3L Plastic-Encapsulate Transistors

2SB1073 TRANSISTOR (PNP)

SOT-89-3L

FEATURES

z Low collector-emitter saturation voltage VCE(sat)

z Large peak collector current IC

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

Parameter

VCBO

Collector-Base Voltage

VCEO

VEBO

IC

PC

TJ

Tstg

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current -Continuous

Collector Power Dissipation

Junction Temperature

Storage Temperature

Value

-30

-20

-7

-4

0.5

150

-55-150

Unit

V

V

V

A

W

℃

℃

1. BASE

2. COLLECTOR

3. EMITTER

1

2

3

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

Symbol Test conditions

V(BR)CBO IC=-10μA,IE=0

V(BR)CEO IC=-1mA,IB=0

V(BR)EBO IE=-10μA,IC=0

ICBO

VCB=-30V,IE=0

IEBO

VEB=-7V,IC=0

hFE

VCE=-2V,IC=-2A

VCE(sat) IC=-3A,IB=-100mA

fT

VCE=-6V,IC=-50mA,f=200MHz

Cob

VCB=-20V,IE=0,f=1MHz

Min Typ

-30

-20

-7

120

120

40

Max Unit

V

V

V

-0.1

μA

-0.1

μA

315

-1

V

MHz

pF

CLASSIFICATION OF hFE

Rank

Range

Marking

Q

120-205

IQ

R

180-315

IR

www.cj-elec.com

1

D,Oct,2015

Share Link: