2SB1073 Просмотр технического описания (PDF) - Galaxy Semi-Conductor

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производитель

2SB1073

PNP Epitaxial Planar Silicon Transistors

Galaxy Semi-Conductor 

Production specification

PNP Epitaxial Planar Silicon Transistors

2SB1073

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

Collector-base breakdown voltage

V(BR)CBO IC=-10μA IE=0

-30

V

Collector-emitter breakdown voltage V(BR)CEO IC=-1mA IB=0

-20

V

Emitter-base breakdown voltage

V(BR)EBO IE=-10μA IC=0

-7

V

Collector cut-off current

ICBO

VCB=-30V IE=0

-0.1 μA

Emitter cut-off current

IEBO

VEB=-7V,IC=0

-0.1 μA

DC current gain

hF

VCE=-2V IC=-2A

120

315

Collector-emitter saturation voltage

Transition frequency

Output Capacitance

VCE(sat)

fT

Cobo

IC=-3A IB=-0.1A

VCB=-6V,IE=-50mA,

f=200MHZ

VCB=-20V f=1.0MHz IE=0

-0.6 -1.0 V

120

MHz

40

pF

CLASSIFICATION OF hFE

Rank

Range

Marking

Q

120-205

IQ

R

180-315

IR

E076

Rev.A

www.gmesemi.com

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