TEFT4300 Просмотр технического описания (PDF) - Vishay Semiconductors
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производитель
TEFT4300 Datasheet PDF : 5 Pages
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www.vishay.com
TEFT4300
Vishay Semiconductors
125
100
75
RthJA = 450 K/W
50
25
0
0
94 8308
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
Collector emitter breakdown voltage
Collector emitter dark current
Collector emitter capacitance
Collector light current
Angle of half sensitivity
IC = 1 mA
VCE = 20 V, E = 0
VCE = 5 V, f = 1 MHz, E = 0
Ee = 1 mW/cm2, λ = 950 nm, VCE = 5 V
V(BR)CEO
ICEO
CCEO
Ica
ϕ
Wavelength of peak sensitivity
Range of spectral bandwidth
Collector emitter saturation voltage
Turn-on time
Turn-off time
Cut-off frequency
Ee = 1 mW/cm2, λ = 950 nm, IC = 0.1 mA
VS = 5 V, IC = 5 mA, RL = 100 Ω
VS = 5 V, IC = 5 mA, RL = 100 Ω
VS = 5 V, IC = 5 mA, RL = 100 Ω
λp
λ0.5
VCEsat
ton
toff
fc
MIN.
70
0.8
TYP.
1
3
3.2
± 30
925
875 to 1000
2
2.3
180
MAX.
200
0.3
UNIT
V
nA
pF
mA
deg
nm
nm
V
μs
μs
kHz
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
104
103
VCE = 20 V
102
101
10
20
94 8304
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 2 - Collector Dark Current vs. Ambient Temperature
2.0
1.8
VCE = 5 V
1.6
Ee = 1 mW/cm2
λ = 950 nm
1.4
1.2
1.0
0.8
0.6
0
94 8239
20
40
60
80
100
Tamb - Ambient Temperature (°C)
Fig. 3 - Relative Collector Current vs. Ambient Temperature
Rev. 1.7, 04-Aug-14
2
Document Number: 81549
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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