2SB1260 Просмотр технического описания (PDF) - Secos Corporation.
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2SB1260 Datasheet PDF : 2 Pages
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Elektronische Bauelemente
2SB1260
-1 A, -80 V
PNP Plastic Encapsulated Transistor
CHARACTERISTIC CURVES
-1000
-100
Ta=25 C
VCE=-5V
-10
-1
-0.1
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.1 Grounded emitter propagation
characteristics
Ta=25 C
-1.0
-0.45mA
-0.8
-0.4mA
-0.35mA
-0.6
-0.3mA
-0.25mA
-0.4
-0.2mA
-0.15mA
-0.2
0
0
-0.1mA
-0.05mA
IB=0mA
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.2 Grounded emitter output
characteristics
1000
500
Ta=25 C
200
VCE=-3V
100
50
-1V
20
10
-1 -2 -5 -10 -20 -50-100 -200-500-1000-2000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs.
collector current
Ta=25 C
-2
-1
-0.5
-0.2
-0.1
-0.05
IC/IB=20
10
-0.02
-0.01
-1 -2 -5 -10 -20 -50-100-200-500-1000-2000
COLLECTOR CURRENT : IC (mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
1000
500
Ta=25 C
VCE=-5V
200
100
50
20
10
5
2
1
12
5 10 20 50 100 200 500 1000
EMITTER CURRENT : IE (mA)
Fig.5 Gain bandwidth product vs.
emitter current
1000
500
200
100
50
Ta=25 C
f=1MHz
IE=0A
20
10
5
2
1
-0.1 -0.2
-0.5 -1 -2
-5 -10 -20 -50 -100
COLLECTOR TO BASE VOLTAGE : VCB (V)
Fig.6 Collector output capacitance
vs. collector-base voltage
1000
500
200
100
50
Ta=25 C
f=1MHz
IC=0A
20
10
-0.1 -0.2 -0.5 -1 -2
-5 -10
EMITTER TO BASE VOLTAGE : VEB (V)
Fig. 7 Emitter input capacitance
vs. emitter-base voltage
IC Max. (Pulse)
-2
-1 IC Max.
-0.5
Ta=25 C
* Single
nonrepetitive
pulse
-0.2
-0.1
-0.05
-0.5 -1 -2 -5 -10 -20 -50 -100
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig. 8 Safe operating area
(2SB1260)
http://www.SeCoSGmbH.com/
01-July-2007 Rev. A
Any changes of specification will not be informed individually.
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