B1096 Просмотр технического описания (PDF) - New Jersey Semiconductor
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B1096 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcE(sat) Collector-Emitter Saturation Voltage lc= -0.5A; IB= -50mA
ICBO
Collector Cutoff Current
VCB=-150V;IE=0
IEBO
Emitter Cutoff Current
hFE
DC Current Gain
VEB= -4V; lc= 0
lc=-0.4A;VCE=-10V
fr
Current-Gain—Bandwidth Product IC=-0.4A;VCE=-10V
• hFE Classifications
M
L
K
40-80 60-120 100-200
2SB1096
MIN TYP. MAX UNIT
-1.0 V
-50 u A
-50 M A
40
200
5
MHz
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