KSC1623 Просмотр технического описания (PDF) - Fairchild Semiconductor

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производитель

KSC1623

NPN Epitaxial Silicon Transistor

Fairchild Semiconductor 

November 2014

KSC1623

NPN Epitaxial Silicon Transistor

Features

• Low Frequency Amplifier and High Frequency OSC.

• Complement to KSA812

3

2

SOT-23

1

1. Base 2. Emitter 3. Collector

Ordering Information

Part Number

KSC1623YMTF

KSC1623GMTF

KSC1623LMTF

Marking

C1Y

C1G

C1L

Package

SOT-23 3L

SOT-23 3L

SOT-23 3L

Packing Method

Tape and Reel

Tape and Reel

Tape and Reel

Absolute Maximum Ratings

Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-

ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-

tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The

absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.

Symbol

Parameter

Value

Unit

VCBO

VCEO

VEBO

IC

TJ

TSTG

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Junction Temperature

Storage Temperature

60

V

50

V

5

V

100

mA

150

°C

-55 to +150

°C

© 2002 Fairchild Semiconductor Corporation

KSC1623 Rev. 1.1.0

www.fairchildsemi.com

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