Silicon PNP Power Transistor
ELECTRICAL CHARACTERISTICS
Tc=251C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc=-10mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -5A; IB= -0.5A
VBE(sat) Base-Emitter Saturation Voltage
lc= -5A; IB= -0.5A
ICEO
Collector Cutoff Current
VCE= -200V; IB= 0
ICBO
Collector Cutoff Current
VCB= -200V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hFE
DC Current Gain
lc= -5A; VCE= -1V
fr
Current-Gain—Bandwidth Product lc=-0.5A;VCE=-10V
2SA1250
MIN TYP. MAX UNIT
-200
V
-1.0
V
-1.5
V
-1.0 mA
-0.1 mA
-0.1 mA
10
40
MHz