A671 Просмотр технического описания (PDF) - New Jersey Semiconductor

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производитель

A671

Silicon PNP Power Transistor

New Jersey Semiconductor 

Silicon PNP Power Transistor

2SA671

ELECTRICAL CHARACTERISTICS

unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN TYP. MAX UNIT

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -50mA ; IB= 0

-50

V

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -5mA ; lc= 0

-7

V

vCE(sat) Collector-Emitter Saturation Voltage lc= -2A; IB= -0.2A

VBE(OH) Base-Emitter On Voltage

lc=-1A;VCE=-4V

ICBO

Collector Cutoff Current

VCB= -25V ; IE= 0

-1.0

V

-1.5

V

-100 u A

IEBO

Emitter Cutoff Current

VEB= -4V;lc= 0

-100 U A

hpE-1

DC Current Gain

lc=-0.1A; VCE=-4V

35

320

hpE-2

DC Current Gain

lc=-1A;VCE=-4V

35

fi

Current-Gain—Bandwidth Product

lc= -0.5A;VCE= -4V; f,est= 1MHz

5

MHz

E.! Classifications

A

B

C

D

35-70 60-120 100-200 160-320

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