A671 Просмотр технического описания (PDF) - New Jersey Semiconductor
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A671 Datasheet PDF : 2 Pages
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J.S.11S.U <~>z)ni-C,onaiLct:oi
, One.
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA671
DESCRIPTION
• Low Collector Saturation Voltage-
: VCE(SUS)= -1.0V(Max)@ lc= -2.0A
• DC Current Gain
: hFE= 35-320® lc= -0.5A
• Complement to Type 2SC1061
APPLICATIONS
• Designed for use in low frequency power amplifier
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
-50
V
Vceo Collector-Emitter Voltage
-50
V
VEBO Emitter-Base Voltage
-4
V
Ic
Collector Current-Continuous
-3
A
ICM
Collector Current-Peak
-6
A
IB
Base Current-Continuous
Total Power Dissipation
PC
@ TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
-0.5
A
25
W
150
'C
-55-150 •c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX
5.0
UNIT
°c/w
PIN 1.BASE
J. COLLECTOR
TO-220C package
-* 3 -
-< ii/ H ,,-- *
yE J (
Mi
A*
r-».
ii
*H
'"T
K
1ij * L
T
• f J¥*
H<
*U j
.
c
i
mm
DtM M N MAX
A 15. 50 15.90
B 9.<)0 10,20
C 4.;>0 4,50
D o:ro 0.90
F 3.-10 3.70
G 4.< 18 5.18
H 2.68 2.90
J 0.-M 0,60
K 13.00 13.40
L i.: 0 1.45
0 2. ro 2.90
R
S
2,30 2.70
i;29 1.35
U 6. 45 6.65
V 8. 66 8.86
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
notice. Inforrrmtion furnished by N.I Semi-Conductors is helieved to he both accurate and reliable at the time of going
to press. I kmcver. NJ Semi-Conductors assumes no responsibility for any errors or omissionsdiscovered in its use. "
N.I Semi-Condiictors encourages customers to verity that datasheets arc current before placing orders.
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