JMnic
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ,IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-5mA ,IC=0
VCEsat Collector-emitter saturation voltage IC=-2A; IB=-0.2A
VBE
Base-emitter on voltage
IC=-1A ; VCE=-4V
ICBO
Collector cut-off current
VCB=-25V; IE=0
IEBO
Emitter cut-off current
VEB=-4V; IC=0
hFE-1
DC current gain
IC=-0.1A ; VCE=-4V
hFE-2
DC current gain
IC=-1A ; VCE=-4V
fT
Transition frequency
IC=-0.5A ; VCE=-4V
hFE-1 Classifications
A
B
C
D
35-70 60-120 100-200 160-320
Product Specification
2SA671
MIN TYP. MAX UNIT
-50
V
-7
V
-1.0
V
-1.5
V
-100 μA
-100 μA
35
320
35
5.0
MHz
2