D1193 Просмотр технического описания (PDF) - Inchange Semiconductor
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D1193 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=50mA ;RBE=∞
V(BR)CBO Collector-base breakdown voltage
IC=5mA ;IE=0
VCEsat Collector-emitter saturation voltage IC=7A ;IB=14mA
VBEsat Base-emitter saturation voltage
IC=7A ;IB=14mA
ICBO
Collector cut-off current
VCB=40V; IE=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
IC=7A ; VCE=2V
fT
Transition frequency
IC=7A ; VCE=5V
Product Specification
2SD1193
MIN TYP. MAX UNIT
60
V
70
V
1.5
V
2.0
V
0.1
mA
3
mA
2000
20
MHz
2
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