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D1193 Просмотр технического описания (PDF) - Inchange Semiconductor

Номер в каталоге
Компоненты Описание
производитель
D1193
Iscsemi
Inchange Semiconductor Iscsemi
D1193 Datasheet PDF : 3 Pages
1 2 3
Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1193
DESCRIPTION
·With TO-3PN package
·Complement to type 2SB883
·High DC current gain
·High current capacity and wide ASO
·Low saturation voltage
APPLICATIONS
·Motor drivers, printer hammer drivers,
relay drivers,voltage regulator control.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICP
Collector current (Pulse)
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25
MAX
70
60
6
15
20
70
150
-55~150
UNIT
V
V
V
A
A
W

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