2SD1172 Просмотр технического описания (PDF) - Inchange Semiconductor
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2SD1172 Datasheet PDF : 2 Pages
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INCHANGE Semiconductor
isc Silicon NPN Power Transistor
isc Product Specification
2SD1172
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Power Dissipation
·Wide Area of Safe Operation
APPLICATIONS
·Designed for line-operated horizontal deflection output
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
1500
V
VCES
Collector-Emitter Voltage
1500
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current- Continuous
3
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation
@ TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
5
A
65
W
130
℃
-65~130
℃
isc website：www.iscsemi.cn
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