IRF541 Просмотр технического описания (PDF) - New Jersey Semiconductor
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IRF541 Datasheet PDF : 3 Pages
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IRF140-143/IRF540-543
Electrical Characteristics (Cont.) (Tc = 25°C unless otherwise noted)
Symbol
Characteristic
Min
Dynamic Characteristics
Cjss
Input Capacitance
COM
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics (TC = 25°C, Figures 1, 2,)3
tdlon)
t,
Turn-On Delay Time
Rise Time
td(otf)
tf
Turn-Oft Delay Time
Fall Time
ld(on)
tr
*d(otf)
»f
QQ
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Max
Unit
1600
PF
600
pF
300
PF
30
ns
60
ns
80
ns
30
ns
60
ns
450
ns
150
ns
200
ns
60
nC
Symbol
Characteristic
Source-Drain Diode Characteristics
VSD
Diode Forward Voltage
IRF140/141/540/541
IRF142/143/542/543
V
Reverse Recovery Time
Typ
Max
Unit
2.0
2.5
V
2.0
2.3
V
300
ns
Notu
1. Tj- -I-25'C to +1BO'C
2. Pulse widlh limited by Tj
3. Switching time measurements performed on LEM TR-58 test equipment
Test Conditions
VDS - 25 V, VGS - 0 V
f - 1 . 0 MHz
VDD = 45 V. b -15 A
VQS -10 V, RGEN-4.7 S7
RQS - 4.7 li
VDD-25 V, ID -15 A
VQS-IO v, RQEN-SO n
Ros-50 n
VGS -10 V, ID -34 A
VDD = 35 V
Test Conditions
ls - 27 A; VQS - 0 V
ls - 24 A; VQS - 0 V
ls = 4.0 A; dls/dt - 25 A/»iS
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