HI-200 Просмотр технического описания (PDF) - Renesas Electronics
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HI-200 Datasheet PDF : 11 Pages
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HI-200, HI-201
Die Characteristics
METALLIZATION:
Type: CuAl
Thickness: 16kÅ 2kÅ
Metallization Mask Layout
OUT 1
A1
21
PASSIVATION:
Type: Nitride over Silox
Nitride Thickness: 3.5kÅ 1kÅ
Silox Thickness: 12kÅ 2kÅ
WORST CASE CURRENT DENSITY:
2 x 105 A/cm2 at 25mA
HI-201
A2
16 15
OUT 2
IN 1
3
V-
4
GND
5
IN 4
6
14
IN 2
13
V+
12
VREF
11
IN 3
OUT 4
7
8
A4
9 10
OUT 3
A3
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FN3121 Rev 9.00
September 15, 2015
Page 10 of 11
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