ZTX696B Просмотр технического описания (PDF) - Diodes Incorporated.

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производитель

ZTX696B

NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

Diodes Incorporated. 

ZTX696B

ELECTRICAL CHARACTERISTICS (at Tamb = 25°C)

PARAMETER

SYMBOL MIN. TYP. MAX.

Transition Frequency

fT

70

UNIT

MHz

Input Capacitance

Cibo

200

pF

Output Capacitance

Cobo

6

pF

Switching Times

ton

toff

80

ns

4400

ns

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

CONDITIONS.

IC=50mA, VCE=5V

f=50MHz

VEB=0.5V, f=1MHz

VCE=10V, f=1MHz

IC=100mA, IB!=10mA

IB2=10mA, VCC=50V

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MAX.

Thermal Resistance:Junction to Ambient1

Rth(j-amb)1

175

Junction to Ambient2

Rth(j-amb)2†

116

Junction to Case

Rth(j-case)

70

† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

UNIT

°C/W

°C/W

°C/W

3-248

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