ZTX651(1994) Просмотр технического описания (PDF) - Diodes Incorporated.

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Компоненты Описание

производитель

ZTX651
(Rev.:1994)

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

Diodes Incorporated. 

ZTX650

ZTX651

PARAMETER

SYMBOL

ZTX650

ZTX651

UNIT CONDITIONS.

MIN. TYP. MAX. MIN. TYP. MAX.

Transition

Frequency

fT

140 175

140 175

MHz IC=100mA, VCE=5V

f=100MHz

Switching Times ton

45

45

ns

toff

800

800

ns

Output Capacitance Cobo

30

30 pF

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

IC=500mA, VCC=10V

IB1=IB2=50mA

VCB=10V f=1MHz

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MAX.

Thermal Resistance:Junction to Ambient1

Junction to Ambient2

Junction to Case

Rth(j-amb)1

175

Rth(j-amb)2†

116

Rth(j-case)

70

† Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.

UNIT

°C/W

°C/W

°C/W

2.5

2.0

1.5

1.0

0.5

AmbieCnat steemtemppeerraattuurree

0

-40 -20 0 20 40 60 80 100 120 140 160 180 200

T -Temperature (°C)

Derating curve

200

D=1 (D.C.)

t1 D=t1/tP

100

tP

D=0.5

D=0.2

D=0.1

Single Pulse

0

0.0001 0.001 0.01 0.1

1

10

100

Pulse Width (seconds)

Maximum transient thermal impedance

3-220

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