BF1109R Просмотр технического описания (PDF) - NXP Semiconductors.
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BF1109R Datasheet PDF : 15 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1109; BF1109R; BF1109WR
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
VDS
drain-source voltage
ID
drain current (DC)
IG1
gate 1 current
IG2
gate 2 current
Ptot
total power dissipation
Tstg
storage temperature
Tj
operating junction temperature
CONDITIONS
Tamb 80 C; note 1
Note
1. Device mounted on a printed-circuit board.
MIN.
65
MAX.
11
30
10
10
200
+150
+150
UNIT
V
mA
mA
mA
mW
C
C
handboo2k,5h0alfpage
Ptot
(mW)
200
150
100
50
0
0
40
MGM243
80
120
160
Tamb (°C)
Fig.4 Power derating curve.
1997 Dec 08
3
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