BF1109R Просмотр технического описания (PDF) - NXP Semiconductors.
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BF1109R Datasheet PDF : 15 Pages
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NXP Semiconductors
N-channel dual-gate MOS-FETs
Product specification
BF1109; BF1109R;
BF1109WR
FEATURES
Short channel transistor with high
forward transfer admittance to input
capacitance ratio
Low noise gain controlled amplifier
up to 1 GHz
Internal self-biasing circuit to
ensure good cross-modulation
performance during AGC and good
DC stabilization.
PINNING
PIN
1
2
3
4
DESCRIPTION
source
drain
gate 2
gate 1
APPLICATIONS
VHF and UHF applications with 9 V
supply voltage, such as television
tuners and professional
communications equipment.
DESCRIPTION
Enhancement type N-channel
field-effect transistor with source and
substrate interconnected. Integrated
diodes between gates and source
protect against excessive input
voltage surges. The BF1109,
BF1109R and BF1109WR are
encapsulated in the SOT143B,
SOT143R and SOT343R plastic
packages respectively.
handbook, 2 c4olumns
3
1
Top view
2
MSB014
BF1109 marking code: NFp.
Fig.1 Simplified outline
(SOT143B).
handbook, 2 co3lumns
4
2
Top view
1
MSB035
BF1109R marking code: NBp.
Fig.2 Simplified outline
(SOT143R).
ok, halfpage
3
4
2
Top view
1
MSB842
BF1109WR marking code: NB.
Fig.3 Simplified outline
(SOT343R).
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
ID
Ptot
yfs
Cig1-ss
Crss
F
drain-source voltage
drain current (DC)
total power dissipation
forward transfer admittance
input capacitance at gate 1
reverse transfer capacitance
noise figure
Xmod
Tj
cross-modulation
operating junction temperature
CONDITIONS
MIN.
Tamb 80 C
f = 1 MHz
f = 800 MHz
input level for k = 1% at 40 dB AGC 100
TYP.
30
2.2
25
1.5
MAX. UNIT
11
V
30
mA
200 mW
mS
2.7 pF
40
fF
2.5 dB
dBV
150 C
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
1997 Dec 08
2
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