NE76118-T1 Просмотр технического описания (PDF) - California Eastern Laboratories.
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NE76118-T1 Datasheet PDF : 4 Pages
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NE76118
ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C)
SYMBOLS
PARAMETERS
UNITS RATINGS
VDS
Drain to Source Voltage
V
5
VGDO
Gate to Drain Voltage
V
-5
VGSO
Gate to Source Voltage
V
-6
IDS
Drain Current
mA
IDSS
TCH
Channel Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to +150
PT
Total Power Dissipation mW
130
Note:
1.Operation in excess of any one of these parameters may result
in permanent damage.
RECOMMENDED
OPERATING CONDITIONS
SYMBOLS
PARAMETERS
UNITS MIN TYP MAX
VDS Drain to Source Voltage V
34
ID
Drain Current
mA
10 20
PIN
Input Power
dBm
0
TYPICAL PERFORMANCE CURVES (TA = 25°C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
250
200
150
100
50
0
0
50
100
150
200
Ambient Temperature, TA (˚C)
DRAIN CURRENT vs.
GATE TO SOURCE VOLTAGE
80
VDS = 3 V
60
40
20
0
-2.0
-1.0
0
Gate to Source Voltage, VGS (V)
TYPICAL NOISE PARAMETERS (TA = 25°C)
VCE = 3 V, IC = 10 mA
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
ΓOPT
MAG ANG
Rn/50
500
1000
1500
2000
2500
3000
3500
4000
4500
5000
0.55
23.0 0.77
9
0.64
0.65
18.0 0.78
26
0.50
0.75
16.0 0.80
38
0.41
0.85
14.2 0.79
42
0.35
0.93
12.9 0.78
47
0.30
1.00
11.7 0.76
55
0.26
1.08
10.7 0.72
64
0.23
1.15
10.0 0.64
76
0.20
1.22
9.2 0.45
94
0.18
1.30
8.5 0.28
109
0.16
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
100
80
VGS
0
60
-0.2
40
-0.4
20
-0.6
0
0
1
2
3
-0.8
-1.0
4
5
Drain to Source Voltage, VDS (V)
FORWARD INSERTION GAIN vs.
DRAIN CURRENT
25
VDS = 3 V
20
f = 1 GHz
15
f = 2 GHz
10
5
0
1
23
5 7 10
20
Drain Current, ID (mA)
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