2SA1077 Просмотр технического описания (PDF) - New Jersey Semiconductor
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2SA1077 Datasheet PDF : 2 Pages
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Silicon PNP Power Transistor
2SA1077
ELECTRICAL CHARACTERISTICS
TC=25'C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -1mA; RBE= °°
V(BR)CBO Collector-Base Breakdown Voltage
lc= -50u A; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= -50u A; lc= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -5A;IB= -0.5A
VsE(on) Base to Emitter Voltage
ICBO
Collector Cutoff Current
VCE= -5V; lc= 5A
VCB=-120V; IE=0
ICEO
Collector Cutoff Current
VCE=-120V; IB=0
IEBO
Emitter Cutoff Current
VEB= -TV; lc= 0
hpE-i
DC Current Gain
lc= -1A; VCE= -5V
hFE-2
DC Current Gain
lc= -5A; VCE= -5V
COB
Out[ut Capacitance
|E=0;VCB=-10V;f= 1.0MHz
fr
Current-Gain—Bandwidth Product
lc=-1A;VoE=-10V;f=10MHz
Switching Times
ton
Turn-On Time
tstg
Storage Time
tf
Fall Time
lc= -7.5A; IB1= -IB2= -0.75A;
RL=4O
MIN TYP. MAX UNIT
-120
V
-120
V
-7
V
-1.8
V
-1.7
V
-50 U A
-1.0 mA
-50
MA
60
200
40
300
PF
60
MHz
0.15
us
0.5
us
0.11
us
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